BSX63 Просмотр технического описания (PDF) - Comset Semiconductors
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BSX63 Datasheet PDF : 3 Pages
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NPN BSX62-BSX63
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
Symbol
Ratings
ICBO
Collector Cutoff Current
IEBO
VCE(SAT)
VBE(SAT)
VBE
Emitter Cutoff Current
Collector-Emitter
saturation Voltage
Base-Emitter saturation
Voltage
Base-Emitter Voltage
hFE
DC Current Gain
fT
Transition frequency
CC
Collector capacitance
Test Condition(s)
VCB = 40 V, IE =0
BSX62
VCB = 60 V, IE =0
BSX63
VCB = 40 V, IE = 0
Tj = 150°C
BSX62
VCB = 60 V, IE =0
Tj = 150°C
BSX63
VBE = 5.0 V, IC =0
IC = 1 A, IB = 100 mA
IC = 2 A, IB = 200 mA
IC = 1 A, IB = 100 mA
IC = 2 A, IB = 200 mA
IC = 100 mA, VCE = 1 V
IC = 1 A, VCE = 1 V
IC = 2 A, VCE = 5 V
BSX62/10
IC = 100 m
VCE = 1 V
BSX63/10
BSX62/16
BSX63/16
IC = 1 A
VCE = 1 V
BSX62/10
BSX63/10
BSX62/16
BSX63/16
BSX62/10
IC = 2 A
VCE = 1 V
BSX63/10
BSX62/16
BSX63/16
IC = 200 mA, VCE = 10 V
f = 100MHz
IE = ie =0, VCB = 10 V
f = 1MHz
Min Typ Max Unit
-
- 100 nA
-
- 100 µA
-
- 100 nA
-
-
-
-
0.7
0.8
V
-
-
-
-
1.2
1.3
V
-
-
1
1
- 1.2 V
-
- 1.3
- 110 -
- 180 -
63 100 160
-
100 160 250
- 70 -
- 120 -
30 70 - MHz
-
- 70 pF
26/09/2012
COMSET SEMICONDUCTORS
2/3
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