BSS87 Просмотр технического описания (PDF) - Infineon Technologies

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BSS87

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

Thermal Characteristics

Parameter

Rev. 2.0

Characteristics

Thermal resistance, junction - case

(Pin 2)

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 1)

BSS87

Symbol

Values

Unit

min. typ. max.

RthJC

RthJA

-

-

10 K/W

-

- 125

-

-

70

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0, ID=250µA

Gate threshold voltage, VGS = VDS

ID=108µA

Zero gate voltage drain current

VDS=240V, VGS=0, Tj=25°C

VDS=240V, VGS=0, Tj=150°C

Gate-source leakage current

VGS=20V, VDS=0

Drain-source on-state resistance

VGS=4.5V, ID=0.24A

Drain-source on-state resistance

VGS=10V, ID=0.26A

V(BR)DSS 240

-

-V

VGS(th)

0.8

1.2

1.8

IDSS

IGSS

µA

-

-

0.1

-

- 100

-

-

10 nA

RDS(on)

-

4.6 7.5 W

RDS(on)

-

3.9

6

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

Page 2

2016-05-30

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