BD911 Просмотр технического описания (PDF) - Comset Semiconductors

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BD911

SILICON POWER TRANSISTORS

Comset Semiconductors 

SEMICONDUCTORS

BD909 – BD911

SILICON POWER TRANSISTORS

The BD909 and DB911, are silicon epitaxial-base NPN power transistors in a TO-220

envelope. They are intended for use in power linear and switching applications.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

BD909

BD911

VCBO

Collector-Base Voltage

IE = 0

80

100

VCEO

Collector-Emitter Voltage

IB = 0

80

100

VEBO

Emitter-Base Voltage

IC = 0

5

IC

Collector Current

15

IE

Emitter Current

15

IB

Base Current

5

Pt

Power Dissipation

90

Tj

Junction Temperature

150

Tstg

Storage Temperature range

-65 to 150

Limiting values in accordance with the Absolute Maximum System (IEC 134)

THERMAL CHARACTERISTICS

Symbol

Ratings

RthJ-mb From junction to mounting base

Value

1.4

Unit

V

V

V

A

A

A

W

°C

Unit

°C/W

25/09/2012

COMSET SEMICONDUCTORS

1|3

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