BD441 Просмотр технического описания (PDF) - Comset Semiconductors
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BD441 Datasheet PDF : 3 Pages
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BD439 – BD441
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
ICBO
Collector cut-off current
IE= 0, VCB= 60 V
IE= 0, VCB= 80 V
ICES
Collector cut-off current
VBE= 0, VCE= 60 V
VBE= 0, VCE= 80 V
IEBO
Emitter cut-offcurrent
IC= 0
VEB= 5 V
VCEO(SUS)
Collector-Emitter
sustaning Voltage (*)
IB= 0
IC= 100 mA
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
IC= 2 A
IB= 200 mA
IC= 10 mA
VBE
Base-Emitter Voltage(*)
VCE= 5 V
IC= 2 A
VCE= 1 V
IC= 10 mA
VCE= 5 V
hFE
DC Current Gain (*)
IC= 500 mA
VCE= 1 V
IC= 2 A
VCE= 1 V
fT
Transition frequency
IC= 250 mA
VCE= 1 V
(*) Measured under pulse conditions :tP <300µs, δ <1.5%
BD439
BD441
BD439
BD441
BD439
BD441
BD439
BD441
BD439
BD441
BD439
BD441
BD439
BD441
BD439
BD441
BD439
BD441
BD439
BD441
BD439
BD441
Min Typ Max Unit
-
- 100
µA
-
- 100
-
-
1 mA
60 -
80 -
-
-
V
-
- 0.8 V
- 0.58 -
V
-
- 1.5 V
20 - 130
15 - 130
40 - 140 -
25 -
-
15 -
-
3
-
- MHz
25/09/2012
COMSET SEMICONDUCTORS
2|2
27/08/2012
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