BCX51-10 Просмотр технического описания (PDF) - Infineon Technologies

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BCX51-10

PNP Silicon AF Transistors

Infineon Technologies 

BCX51...BCX53

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

DC collector current

Peak collector current

Base current

Peak base current

Total power dissipation, TS = 130 °C

Junction temperature

Storage temperature

Thermal Resistance

Junction - soldering point1)

Symbol

VCEO

VCBO

VEBO

IC

ICM

IB

IBM

Ptot

Tj

Tstg

BCX51

45

45

5

BCX52 BCX53 Unit

60

80 V

60

100

5

5

1

A

1.5

100

mA

200

1

W

150

°C

-65 ... 150

RthJS

≤20

K/W

1For calculation of RthJA please refer to Application Note Thermal Resistance

2

Feb-10-2004

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