BCR400R Просмотр технического описания (PDF) - Siemens AG
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BCR400R Datasheet PDF : 7 Pages
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BCR 400R
Total power dissipation Ptot = f (TA*;TS)
* Package mounted on epoxy
400
mW
Ptot
300
250
TS
TA
200
150
100
50
0
0 20 40 60 80 100 120 °C 150
TA,TS
Note that up to TS = 115°C
it is not possible to exceed Ptot
respecting the maximum
ratings of VS and IContr.
The collector or drain
current (respectively) of
the stabilized RF transistor
does not affect BCR 400
directly, as it provides just the
base current.
Typical application for GaAs FET
with active bias controller
Semiconductor Group
5
Nov-27-1996
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