BCP69-16/DG Просмотр технического описания (PDF) - NXP Semiconductors.
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BCP69-16/DG Datasheet PDF : 13 Pages
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NXP Semiconductors
BCP69
20 V, 1 A PNP medium power transistor
103
hFE
mle309
102
−10−1
−1
−10
−102
−103
−104
IC (mA)
Fig 7.
VCE = −1 V
BCP69-25: DC current gain as a function of
collector current; typical values
−1000
VBE
(mV)
−800
mle304
−600
−2.4
IC
(A)
−2.0
−1.6
−1.2
−0.8
−0.4
006aab404
IB (mA) = −12.0
−9.6
−7.2
−4.8
−10.8
−8.4
−6.0
−3.6
−2.4
−1.2
0
0
−1
−2
−3
−4
−5
VCE (V)
Fig 8.
Tamb = 25 °C
BCP69-25: Collector current as a function of
collector-emitter voltage; typical values
−103
VCEsat
(mV)
−102
mle310
−400
−10
−200
0
−10−1
−1
−10
−102
−103
−104
IC (mA)
Fig 9.
VCE = −1 V
BCP69-25: Base-emitter voltage as a function
of collector current; typical values
−1
−10−1
−1
−10
−102
−103 −104
IC (mA)
IC/IB = 10
Fig 10. BCP69-25: Collector-emitter saturation voltage
as a function of collector current; typical
values
BCP69_6
Product data sheet
Rev. 06 — 2 December 2008
© NXP B.V. 2008. All rights reserved.
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