BC847PN Просмотр технического описания (PDF) - Siemens AG

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BC847PN

NPN/PNP Silicon AF Transistor Array

Siemens AG 

BC 847PN

Collector-base capacität CCB = f (VCBO)

Emitter-base capacität CEB = f (VEBO )

Transition frequency fT = f (IC)

VCE = 5V

Collector cutoff current ICBO = f (TA)

VCB = 30V

Collector-emitter saturation voltage

IC = f (VCEsat), hFE = 20

Semiconductor Group

5

May-12-1998

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