BAY80(1999) Просмотр технического описания (PDF) - Vishay Semiconductors

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BAY80
(Rev.:1999)

Silicon Epitaxial Planar Diode

Vishay Semiconductors 

BAY80

Vishay Telefunken

Electrical Characteristics

Tj = 25_C

Parameter

Forward voltage

Reverse current

Breakdown voltage

Diode capacitance

Differential forward resistance

Reverse recovery time

Test Conditions

IF=0.1mA

IF=10 mA

IF=50 mA

IF=100mA

IF=150mA

VR=120V

VR=120 V, Tj=150°C

IR=100mA, tp/T=0.01,

tp=0.3ms

VR=0, f=1MHz

IF=10mA

W IF=IR=30mA, iR=3mA,

RL=100

Type

Symbol Min Typ Max Unit

VF

VF

VF

VF

VF

IR

IR

V(BR)

0.4

0.63

0.73

0.78

150

0.52 V

0.78 V

0.92 V

1V

1.07 V

100 nA

100 mA

V

CD

rf

1.5 5 pF

5

W

trr

50 ns

Characteristics (Tj = 25_C unless otherwise specified)

1000

1000

100

Scattering Limit

10

1

0.1

VR = VRRM

Tj = 25°C

100

10

1

Scattering Limit

0.01

0

94 9084

40

80

120 160 200

Tj – Junction Temperature ( °C )

Figure 1. Reverse Current vs. Junction Temperature

0.1

0

94 9085

0.4

0.8

1.2

1.6 2.0

VF – Forward Voltage ( V )

Figure 2. Forward Current vs. Forward Voltage

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Document Number 85553

Rev. 2, 01-Apr-99

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