BAT85 Просмотр технического описания (PDF) - NXP Semiconductors.
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BAT85 Datasheet PDF : 9 Pages
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NXP Semiconductors
BAT85
Schottky barrier single diode
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
BAT85
DO-34
Description
hermetically sealed glass package; axial leaded; 2 leads
Version
SOD68
4. Marking
Table 4. Marking codes
Type number
BAT85
Marking code
marking band
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VR
reverse voltage
IF
forward current
IF(AV)
average forward current
δ ≤ 0.5 ; f = 20 kHz; PCB mounting,
lead length = 4 mm; half sine wave
IFRM
repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5
IFSM
non-repetitive peak forward
tp ≤ 10 ms; Tj(init) = 25 °C
current
Tj
junction temperature
Tamb
ambient temperature
Tstg
storage temperature
Min Max Unit
-
30
V
-
200 mA
-
200 mA
-
300 mA
-
5
A
-
125 °C
-65 125 °C
-65 150 °C
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
Min Typ Max Unit
[1]
-
-
320 K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
BAT85
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 July 2012
© NXP B.V. 2012. All rights reserved
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