BAT54C Просмотр технического описания (PDF) - STMicroelectronics
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BAT54C Datasheet PDF : 5 Pages
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BAT54, A, C, S
THERMAL RESISTANCE
Symbol
Parameter
Rth (j-a) Junction to ambient (*)
(*) Mounted on epoxy board with recommended pad layout.
Value
500
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameters
VF * Forward voltage drop
IR ** Reverse leakage current
Pulse test : * tp = 380 µs, δ < 2%
** tp = 5 ms, δ < 2%
Tests conditions
Tj = 25°C
IF = 0.1 mA
IF = 1 mA
IF = 10 mA
IF = 30 mA
IF = 100 mA
Tj = 25°C
VR = 30 V
Tj = 100°C
Min.
Typ.
Max.
240
320
400
500
900
1
100
Unit
mV
µA
DYNAMIC CHARACTERISTICS (Tj = 25 °C)
Symbol Parameters
C Junction
capacitance
trr
Reverse recovery
time
Tests conditions
Tj = 25°C VR = 1 V F = 1 MHz
IF = 10 mA IR = 10 mA Tj = 25°C
Irr = 1 mA RL = 100 Ω
Min.
Typ. Max. Unit
10 pF
5
ns
Fig.1 : Average forward power dissipation versus
average forward current.
PF(av)(W)
0.35
0.30
δ = 0.05
0.25
0.20
0.15
0.10
0.05
0.00
0.00 0.05
δ = 0.1 δ = 0.2
δ = 0.5
IF(av) (A)
0.10 0.15 0.20
δ=1
T
δ=tp/T
0.25
tp
0.30
Fig.2 : Average forward current versus ambient
temperature ( δ = 1).
IF(av)(A)
0.35
0.30
0.25
0.20
0.15
0.10
T
0.05
δ=tp/T
tp
Tamb(°C)
0.00
0
25
50
75
100 125 150
2/5
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