BAT54 Просмотр технического описания (PDF) - General Semiconductor

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BAT54

Schottky Diodes

General Semiconductor 

BAT54 THRU BAT54S

ELECTRICAL CHARACTERISTICS

Ratings for one diode at 25 °C ambient temperature unless otherwise specified

Symbol

Min.

Typ.

Reverse Breakdown Voltage

tested with 100 µA Pulses

V(BR)R

30

–

Forward Voltage

Pulse Test tp < 300 µs, δ < 2%

at IF = 0.1 mA

at IF = 1 mA

at IF = 10 mA

at IF = 30 mA

at IF = 100 mA

VF

–

–

VF

–

–

VF

–

–

VF

–

–

VF

–

–

Leakage Current

Pulse Test tp < 300 µs, δ < 2%

at VR = 25 V

Capacitance

at VF = 1 V, f = 1 MHz

IR

–

–

Ctot

–

–

Reverse Recovery Time

trr

from IF = 10 mA through IR = 10 mA to IR = 1 mA,

RL = 100 Ω

–

–

Thermal Resistance Junction to Ambient Air

RthJA

–

–

1) Device on fiberglass substrate, see layout

Max.

Unit

–

V

240

mV

320

mV

400

mV

500

mV

1000

mV

2

µA

10

pF

5

ns

4301)

K/W

.30 (7.5)

.12 (3)

.59 (15)

.03 (0.8)

.47 (12)

0.2 (5)

.04 (1) .08 (2)

.04 (1)

.08 (2)

.06 (1.5)

.20 (5.1)

Dimensions in inches (millimeters)

Layout for RthJA test

Thickness: Fiberglass 0.059 in (1.5 mm)

Copper leads 0.012 in (0.3 mm)

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