BAS70T Просмотр технического описания (PDF) - Shenzhen Luguang Electronic Technology Co., Ltd

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BAS70T

Surface Mount Schottky Barrier Diodes

Shenzhen Luguang Electronic Technology Co., Ltd 

BAS70T/-04T/-05T/-06T

Surface Mount Schottky Barrier Diodes

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN MAX

Reverse breakdown voltage V(BR)R

IR=10μA

70

Leakage current

IR

Forward voltage

VF

Typical total capacitance

CT

Reverse recovery Time

trr

VR=50V,tp<300μs

IF=1.0mA,tp<300μS

IF=15mA,tp<300μS

VR=0V,f=1MHz

IF=IR=10mA,Irr=0.1*IR,RL=100Ω

100

410

1000

2.0

5.0

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

UNIT

V

nA

mV

pF

ns

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mail:lge@luguang.cn

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