BAS32L(2008) Просмотр технического описания (PDF) - NXP Semiconductors.
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BAS32L Datasheet PDF : 10 Pages
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NXP Semiconductors
BAS32L
High-speed switching diode
1.2
Cd
(pF)
1.0
mgd004
0.8
0.6
0.4
0
10
VR (V)
20
f = 1 MHz; Tj = 25 °C
Fig 5. Diode capacitance as a function of reverse voltage; typical values
8. Test information
RS = 50 Ω
V = VR + IF × RS
D.U.T.
IF
SAMPLING
OSCILLOSCOPE
Ri = 50 Ω
VR
mga881
tr
tp
10 %
90 %
input signal
t
+ IF
trr
t
(1)
output signal
Input signal: Reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ ≤ 0.05
Oscilloscope: Rise time tr = 0.35 ns
(1) IR = 1 mA
Fig 6. Reverse recovery time test circuit and waveforms
I
1 kΩ
450 Ω
RS = 50 Ω
D.U.T.
OSCILLOSCOPE
Ri = 50 Ω
I
90 %
10 %
tr
tp
input signal
V
VFR
t
t
output signal
mga882
Input signal: Forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty factor δ ≤ 0.005
Fig 7. Forward recovery voltage test circuit and waveforms
BAS32L_6
Product data sheet
Rev. 06 — 29 October 2008
© NXP B.V. 2008. All rights reserved.
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