BAP50-02(2008) Просмотр технического описания (PDF) - NXP Semiconductors.
Номер в каталоге
Компоненты Описание
Список матч
BAP50-02 Datasheet PDF : 7 Pages
| |||
NXP Semiconductors
General purpose PIN diode
GRAPHICAL DATA
103
handbook, halfpage
rD
(Ω)
102
MLD601
600
handbook, halfpage
Cd
(fF)
400
Product specification
BAP50-02
MLD602
10
200
1
10−1
1
10
102
IF (mA)
f = 100 MHz; Tj = 25 °C.
Fig.2 Forward resistance as a function of
forward current; typical values.
0
0
4
8
12
16
20
VR (V)
f = 1 MHz; Tj = 25 °C.
Fig.3 Diode capacitance as a function of
reverse voltage; typical values.
handbook, h0alfpage
s21 2
(1)
(dB)
−1
(2)
−2
(3)
−3
MLD603
−4
−5
0.5
1
1.5
2
2.5
3
f (GHz)
(1) IF = 10 mA.
(2) IF = 1 mA.
(3) IF = 0.5 mA.
Diode inserted in series with a 50 Ω stripline circuit and
biased via the analyzer Tee network.
Tamb = 25 °C.
Fig.4 Insertion loss |s21|2 of the diode in on-state
as a function of frequency; typical values.
handbook, h0alfpage
s21 2
(dB)
−5
MLD604
−10
−15
−20
−25
0.5
1
1.5
2
2.5
3
f (GHz)
Diode zero biased and inserted in series with a 50 Ω stripline circuit.
Tamb = 25 °C.
Fig.5 Isolation (|s21|2) of the diode in off-state as a
function of frequency; typical values.
Rev. 02 - 3 January 2008
4 of 7
Share Link: 