30G120ASW Просмотр технического описания (PDF) - Advanced Power Electronics Corp
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30G120ASW Datasheet PDF : 4 Pages
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1000
V GE =15V
T C =125 o C
100
10
Safe Operating Area
1
1
10
100
1000
10000
V CE , Collector-Emitter Voltage(V)
Fig 7. Turn-off SOA
10
T C =25 o C
8
6
4
I C = 60 A
I C = 30 A
2
I C = 15 A
0
0
4
8
12
16
20
V GE , Gate-Emitter Voltage(V)
Fig 9. Saturation Voltage vs. VGE
100
10
T j =150 o C
1
T j =25 o C
0.1
0
1
2
3
4
V F , Forward Voltage (V)
Fig11. Forward Characteristic of
Diode
AP30G120ASW
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 8. Effective Transient Thermal
Impedance
10
TC=150oC
8
6
I C = 60 A
4
I C = 30 A
2
I C = 15 A
0
0
4
8
12
16
20
V GE , Gate-Emitter Voltage(V)
Fig 10. Saturation Voltage vs. VGE
16
I C = 30 A
V CC =500V
12
8
4
0
0
20
40
60
80
Q G , Gate Charge (nC)
Fig 12. Gate Charge Characterisitics
3
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