80EBU02 Просмотр технического описания (PDF) - Vishay Semiconductors

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80EBU02

Ultrafast Soft Recovery Diode, 80 A FRED Pt™

Vishay Semiconductors 

80EBU02

Vishay High Power Products Ultrafast Soft Recovery Diode,

80 A FRED PtTM

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

Reverse recovery time

IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V

trr

TJ = 25 °C

-

-

-

32

Peak recovery current

Reverse recovery charge

IRRM

Qrr

TJ = 125 °C

TJ = 25 °C

TJ = 125 °C

TJ = 25 °C

TJ = 125 °C

IF = 80 A

VR = 160 V

dIF/dt = 200 A/µs

-

52

-

4.4

-

8.8

-

70

-

240

MAX.

35

-

-

-

-

-

-

UNITS

ns

A

nC

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

Thermal resistance,

junction to case

Thermal resistance,

junction to heatsink

RthJC

RthCS

Mounting surface, flat, smooth and greased

Weight

Mounting torque

Marking device

Case style PowerTabTM

MIN.

-

-

-

-

1.2

(10)

TYP.

-

MAX.

0.70

0.2

-

-

5.02

0.18

-

2.4

-

(20)

80EBU02

UNITS

K/W

g

oz.

N·m

(lbf · in)

www.vishay.com

2

For technical questions, contact: diodes-tech@vishay.com

Document Number: 93024

Revision: 30-Oct-08

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