5SHY35L4510 Просмотр технического описания (PDF) - ABB

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5SHY35L4510

Asymmetric Integrated Gate Commutated Thyristor

ABB 

Max. on-state characteristic model:

VT25 = ATvj + BTvj ⋅IT +CTvj ⋅ln(IT +1) + DTvj ⋅ IT

Valid for iT = 300 – 30000 A

A25

B25

C25

D25

622.7×10-3 163.4×10-6 141.1×10-3

0.0

5SHY 35L4510

Max. on-state characteristic model:

VT125 = ATvj + BTvj ⋅IT +CTvj ⋅ln(IT +1) + DTvj ⋅ IT

Valid for iT = 300 – 30000 A

A125

-16.0×10-3

B125

226.6×10-6

C125

218.4×10-3

D125

0.0

Fig. 3 GCT on-state voltage characteristics

Fig. 4 GCT on-state voltage characteristics

Fig. 5 Surge on-state current vs. pulse length, half-

sine wave

Fig. 6 Surge on-state current vs. number of pulses,

half-sine wave, 10 ms, 50Hz

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1232-02 June 07

page 5 of 9

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