datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать

4030B Просмотр технического описания (PDF) - Micrel

Номер в каталоге
Компоненты Описание
Список матч
4030B Datasheet PDF : 4 Pages
1 2 3 4
MIC94030/94031
Absolute Maximum Ratings
Voltage and current values are negative. Signs not shown for clarity.
Drain-to-Source Voltage (pulse) .................................... 16V
Gate-to-Source Voltage (pulse) .................................... 16V
Continuous Drain Current
TA = 25°C .................................................................... 1A
TA = 100°C ............................................................... 0.5A
Operating Junction Temperature ............... –55°C to +150°
Storage Temperature ............................... –55°C to +150°C
Micrel
Total Power Dissipation
TA = 25°C ............................................................ 568mW
TA = 100°C .......................................................... 227mW
Thermal Resistance
θJA ...................................................................................... 220°C/W
θJC ..................................................................................... 130°C/W
Lead Temperature
1/16" from case, 10s ........................................... +300°C
Electrical Characteristics Voltage and current values are negative. Signs not shown for clarity.
Symbol Parameter
Condition (Note 1)
VBDSS
Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA
VGS
Gate Threshold Voltage
VDS = VGS, ID = 250µA
IGSS
Gate-Body Leakage
VDS = 0V, VGS = 12V, Note 2, Note 3
RGS
Gate-Source Resistor
VDS = 0V, VGS = 12V, Note 2, Note 4
CISS
Input Capacitance
VGS = 0V, VDS = 12V
IDSS
Zero Gate Voltage Drain Current VDS = 12V, VGS = 0V
VDS = 12V, VGS = 0V, TJ = 125°C
ID(ON)
On-State Drain Current
VDS = 10V, VGS = 10V, Note 5
RDS(ON)
Drain-Source On-State Resist.
VGS = 10V, ID = 100mA
VGS = 4.5V, ID = 100mA
VGS = 2.7V, ID = 100mA
gFS
Forward Transconductance
VDS = 10V, ID = 200mA, Note 5
Note 1
Note 2
Note 3
Note 4
Note 5
TA = 25°C unless noted. Substrate connected to source for all conditions
ESD gate protection diode conducts during positive gate-to-source voltage excursions.
MIC94030 only
MIC94031 only
Pulse Test: Pulse Width 80µsec, Duty Cycle 0.5%
Min Typ
13.5
0.6
1.0
500 750
100
0.010
6.3
0.45
0.75
1.20
480
Max
1.4
1
1000
25
250
1.00
Units
V
V
µA
k
pF
µA
µA
A
mS
6-42
1997

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]