C5148 Просмотр технического описания (PDF) - Inchange Semiconductor

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C5148

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC5148

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0

600

V

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 1.3A

VBE(sat) Base-Emitter Saturation Voltage

IC= 5A; IB=B 1.3A

ICBO

Collector Cutoff Current

VCB= 1500V ; IE= 0

IEBO

Emitter Cutoff Current

VEB= 5V ; IC= 0

5.0

V

1.3

V

1.0 mA

10 μA

hFE-1

DC Current Gain

IC= 1A ; VCE= 5V

8

25

hFE-2

DC Current Gain

IC= 5A ; VCE= 5V

3.8

8.0

fT

Current-Gain—Bandwidth Product

IC= 0.1A ; VCE= 10V

2

MHz

COB

Output Capacitance

Switching times

IE= 0 ; VCB= 10V; ftest= 1.0MHz

110

pF

tstg

Storage Time

tf

Fall Time

ICP= 4A , IB1= 0.8A ; fH= 64kHz

4.0 μs

0.3 μs

isc Website：www.iscsemi.cn

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