C4308 Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталоге

Компоненты Описание

Список матч

C4308

Silicon NPN Epitaxial Planar

Renesas Electronics 

2SC4308

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min Typ Max Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

30

—

—

V IC = 100 µA, IE = 0

Collector to emitter breakdown voltage V(BR)CEO

20

—

—

V IC = 1 mA, RBE = ∞

Collector cutoff current

ICBO

—

—

1

µA VCB = 25 V, IE = 0

Emitter cutoff current

IEBO

—

—

10

µA VEB = 3 V, IE = 0

DC current transfer ratio

hFE

50

—

200

VCE = 5 V, IC = 50 mA

Gain bandwidth product

fT

1.5

2.5

—

GHz VCE = 5 V, IC = 50 mA

Collector output capacitance

Cob

—

4.0

—

pF VCB = 10 V, IE = 0, f = 1 MHz

Rev.2.00 Aug 10, 2005 page 2 of 5

Share Link: