C3502 Просмотр технического описания (PDF) - Inchange Semiconductor
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C3502 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector–Emitter Breakdown Voltage—
: V(BR)CEO = 200 V
·Complement to Type 2SA1380
APPLICATIONS
·Designed for ultrahigh-definition CRT display, video out-
put applicaitons
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
0.1
A
ICM
Collector Current-Peak
Collector Power Dssipation
Ta=25℃
PC
Collector Power Dssipation
TC=25℃
Ti
Junction Temperature
Tstg
Storage Temperature Range
0.2
A
1.2
W
5
150
℃
-55~150
℃
isc Product Specification
2SC3502
isc Website：www.iscsemi.cn
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