2SC3380ASTR-E Просмотр технического описания (PDF) - Renesas Electronics

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производитель

2SC3380ASTR-E

Silicon NPN Triple Diffused

Renesas Electronics 

2SC3380

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min Typ Max Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

300

—

—

V IC = 10 µA, IE = 0

Collector to emitter breakdown voltage V(BR)CEO 300

—

—

V IC = 1 mA, RBE = ∞

Emitter to base breakdown voltage

V(BR)EBO

5

—

—

V IE = 10 µA, IC = 0

Collector cutoff current

ICEO

—

—

1

µA VCE = 250 V, RBE = ∞

Collector to emitter saturation voltage

VCE(sat)

—

—

1.5

V IC = 20 mA, IB = 2 mA

DC current transfer ratio

hFE

30

—

200

VCE = 20 V, IC = 20 mA

Gain bandwidth product

fT

—

80

—

MHz VCE = 20 V, IC = 20 mA

Collector output capacitance

Cob

—

—

4

pF VCB = 20 V, IE = 0, f = 1 MHz

Rev.3.00 Aug 10, 2005 page 2 of 5

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