2SC2853 Просмотр технического описания (PDF) - Renesas Electronics

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2SC2853

Silicon NPN Epitaxial

Renesas Electronics 

2SC2853

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min Typ Max Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

90

—

—

V IC = 10 µA, IE = 0

Collector to emitter breakdown voltage V(BR)CEO

90

—

—

V IC = 1 mA, RBE = ∞

Emitter to base breakdown voltage

V(BR)EBO

5

—

—

V IE = 10 µA, IC = 0

Collector cutoff current

ICBO

—

—

0.1

µA VCB = 70 V, IE = 0

Emitter cutoff current

IEBO

—

—

0.1

µA VEB = 2 V, IC = 0

DC current transfer ratio

hFE

400

—

800

VCE = 12 V, IC = 2 mA

Collector to emitter saturation voltage

VCE(sat)

—

0.05 0.10

V IC = 10 mA, IB = 1 mA

Base to emitter saturation voltage

VBE(sat)

—

0.7

1.0

V

Gain bandwidth product

fT

—

310

—

MHz VCE = 6 V, IC = 10 mA

Collector output capacitance

Cob

—

3

—

pF VCB = 10 V, IE = 0,

f = 1 MHz

Rev.2.00 Aug 10, 2005 page 2 of 6

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