2SB857(2005) Просмотр технического описания (PDF) - Unisonic Technologies

Номер в каталоге

Компоненты Описание

Список матч

2SB857
(Rev.:2005)

SILICON PNP TRANSISTOR

Unisonic Technologies 

2SB857

PNP SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATING (Ta=25℃)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltages

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Current (IC Peak)

Total Power Dissipation

VCBO

-130

V

VCEO

-100

V

VEBO

-5

V

IC

-4

A

IC(PEAK)

-8

A

TO-126C

TO-252

PD

1.5

W

1.9

W

Junction Temperature

TJ

+150

℃

Storage Temperature

TSTG

-40 ~ +150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25℃)

PARAMETER

SYMBOL

TEST CONDITIONS

Collector-Base Breakdown Voltage

BVCBO IC=-10µA, IE=0

Collector-Emitter Breakdown Voltage BVCEO IC=-50mA, IB=0

Emitter-Base Breakdown Voltage

BVEBO IE=-10µA, IC=0

Collector-Emitter Saturation Voltage *VCE(SAT) IC=-2A, IB=-0.2A

Base-Emitter Saturation Voltage

*VBE(ON) VCE=-4V, IC=-1A

Collector Cut-off Current

ICBO VCB=-130V, IC=0

DC Current Gain

*hFE1 VCE=-4V, IC=-0.1A

*hFE2 VCE=-4V, IC=-1A

Transition Frequency

fT VCE=-4V, IC=-500mA, f=100MHz

Note *Pulse Test: Pulse Width≦380µS, Duty Cycle≦2%.

MIN

-130

-100

-5

35

60

TYP

15

MAX

-1

-1

-1

UNIT

V

V

V

V

V

µA

320

MHz

CLASSIFICATION OF hFE2

CLASSIFICATION

RANGE

B

60 ~ 120

C

100 ~ 200

D

160 ~ 320

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R217-206,C

Share Link: