2SB649 Просмотр технического описания (PDF) - Transys Electronics Limited

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2SB649

TO-126C Plastic-Encapsulated PNP Transistors

Transys Electronics Limited 

Transys

Electronics

LIMITED

TO-126C Plastic-Encapsulated Transistors

2SB649/2SB649A TRANSISTOR (PNP)

FEATURES

Power dissipation

PCM:

1 W (Tamb=25℃)

Collector current

ICM:

-1.5 A

Collector-base voltage

V(BR)CBO : -180 V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

TO-126C

1. EMITTER

2. COLLECTOR

3. BASE

123

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

Symbol

Test conditions

MIN TYP MAX UNIT

V(BR)CBO

V(BR)CEO

Ic=-1mA, IE=0

Ic=-10mA, IB=0

V(BR)EBO IE=-1mA, IC=0

-180

2SB649 -120

2SB649A -160

-5

ICBO VCB=-160V, IE=0

IEBO

hFE(1)

VEB=-4V, IC=0

VCE=-5V, IC=-150mA

2SB649 60

2SB649A 60

hFE(2) VCE=-5V, IC=-500mA

30

VCE(sat) IC=-500mA, IB=-50mA

VBE VCE=-5V, IC=-150mA

fT

VCE=-5V, IC=-150mA

Cob VCB=-10V, IE=0, f=1MHz

140

27

-10

-10

320

200

-1

-1.5

V

V

V

µA

µA

V

V

MHz

pF

CLASSIFICATION OF hFE(1)

Rank

Range

Marking

B

60-120

C

100-200

D

160-320

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