2SA743A Просмотр технического описания (PDF) - Inchange Semiconductor

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2SA743A

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SA743A

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-Base Breakdown Voltage

IC= -1mA; IE= 0

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; RBE= ∞

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -1mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB=B -0.1A

VBE(on) Base-Emitter On Voltage

IC= -50mA ; VCE= -4V

ICER

Collector Cutoff Current

VCE= -80V; RBE= 1kΩ

hFE-1

DC Current Gain

IC= -50mA ; VCE= -4V

hFE-2

DC Current Gain

IC= -1A ; VCE= -4V

fT

Current-Gain—Bandwidth Product

IC= -30mA ; VCE= -4V

MIN TYP. MAX UNIT

-80

V

-80

V

-4

V

-1.5

V

-1.0

V

-20 μA

60

200

20

120

MHz

‹ hFE-1 Classifications

B

C

60-120 100-200

isc Website：www.iscsemi.cn

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