2N3773(2013) Просмотр технического описания (PDF) - ON Semiconductor

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2N3773
(Rev.:2013)

NPN Power Transistors

ON Semiconductor 

2N3773

300

200 150°C

NPN

100

70

25°C

50

- 55°C

30

VCE = 4 V

20

10

7.0

5.0

0.2 0.3 0.5 0.7 1.0

2.0 3.0 5.0 7.0 10

20

IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain

PNP

300

200

150°C

25°C

100

70

- 55°C

50

30

VCE = 4 V

20

10

7.0

5.0

0.2 0.3 0.5 0.7 1.0

2.0 3.0 5.0 7.0 10

20

IC, COLLECTOR CURRENT (AMPS)

Figure 2. DC Current Gain

2.0

1.6 IC = 4 A

1.2

IC = 8 A

0.8

IC = 16 A

0.4

TC = 25°C

0

0.05 0.07 0.1

0.2 0.3 0.5 0.7 1.0

IB, BASE CURRENT (AMPS)

2.0 3.0

Figure 3. Collector Saturation Region

2.0

1.6 IC = 4 A

1.2

IC = 8 A

0.8

IC = 16 A

0.4

TC = 25°C

0

0.05 0.07 0.1

0.2 0.3 0.5 0.7 1.0

IB, BASE CURRENT (AMPS)

2.0 3.0 5.0

Figure 4. Collector Saturation Region

2.0

IC/IB = 10

1.6

1.2

VBE(sat)

0.8

25°C

0.4

150°C

150°C

VCE(sat)

25°C

0

0.2 0.3 0.5 0.7 1.0

2.0 3.0 5.0 7.0 10

20

IC, COLLECTOR CURRENT (AMPS)

Figure 5. “On” Voltage

2.0

IC/IB = 10

1.6

1.2 VBE(sat)

0.8 25°C

150°C

0.4

150°C

25°C

VCE(sat)

0.2 0.3 0.5 0.7 1.0

2.0 3.0 5.0 7.0 10

20

IC, COLLECTOR CURRENT (AMPS)

Figure 6. “On” Voltage

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