2N5745 Просмотр технического описания (PDF) - Comset Semiconductors

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2N5745

SILICON POWER TRANSISTORS

Comset Semiconductors 

PNP 2N4398 – 2N4399 – 2N5745

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

VBE(on)

Base-Emitter on

Voltage (*)

hFE

DC Current Gain (*)

fT

Transition Frequency

Test Condition(s)

Min

IC= -15 A, VCE= -2 V

IC= -10 A, VCE= -2 V

IC= -30 A, VCE= -4 V

IC= -20 A, VCE= -4 V

IC= -1 A, VCE= -2 V

IC= -15 A, VCE= -2 V

IC= -10 A, VCE= -2 V

IC= -30 A, VCE= -2 V

IC= -20 A, VCE= -4 V

VCE= -10 V, IC= -1 A

f= 1 MHz

2N4398

2N4399

-

2N5745 -

2N4398

2N4399

-

2N5745 -

2N4398 40

2N4399 -

2N5745 -

2N4398

2N4399 15

2N5745

2N4398

2N4399 5

2N5745

2N4398

2N4399

4

2N5745 2

Typ

-

-

-

-

-

-

-

-

-

-

-

MA

x

-1.7

-1.5

-3

-2.5

-

-

-

60

-

-

-

Unit

V

-

MHz

(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2 %

3|4

24/09/2012

COMSET SEMICONDUCTORS

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