2N3906 Просмотр технического описания (PDF) - Weitron Technology
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2N3906 Datasheet PDF : 4 Pages
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PNP General Purpose Transistors
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current
Total Device Dissipation TA=25 C
Junction Temperature
Storage, Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
Tj
Tstg
2N3906
TO-92
1. EMITTER
1
2. BASE
3. COLLECTOR
23
Value
-40
-40
-5.0
-200
0.625
150
-55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
W
C
C
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0)
Collector Cutoff Current (VCE= -40 Vdc, IB =0)
Collector Cutoff Current (VCB= -40 Vdc, IE=0)
Emitter Cutoff Current (VEB= -5.0Vdc, I C =0)
Symbol
Min
V(BR)CEO -40
V(BR)CBO -40
V(BR)EBO -5.0
ICE0
-
ICBO
-
IEBO
-
Max
-
-
-
-0.1
-0.1
-0.1
Unit
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
WEITRON
http://www.weitron.com.tw
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