2N4347 Просмотр технического описания (PDF) - Comset Semiconductors

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2N4347

HIGH POWER INDUSTRIAL TRANSISTORS

Comset Semiconductors 

2N3442

2N4347

HIGH POWER INDUSTRIAL TRANSISTORS

NPN silicon transistors designed for applications in industrial and commercial equipment including high

fidelity audio amplifiers, series and shunts regulators and power switches.

• Low Collector-Emitter Saturation Voltage –

VCE(sat) = 1.0 Vdc (Max) @ IC = 2.0 Adc – 2N4347

• Collector-Emitter Sustaining Voltage-

VCEO(sus) = 120 Vdc (Min) – 2N4347

140 Vdc (Min) – 2N3442

• Excellent Second-Breakdown Capability

ABSOLUTE MAXIMUM RATINGS

Symbol

VCEO

VCB

VEB

IC

IB

PD

TJ

TS

Ratings

#Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Continuous

Peak

Base Current

Continuous

Peak

Total Device Dissipation

Junction Temperature

@ TC = 25°

Derate

above 25°

Storage Temperature

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

(**) This data guaranteed in addition to JEDEC registered data.

Value

120

140

140

160

7.0

5.0

10

10

15 (**)

3.0

7.0

8.0

-

100

117

0.57

0.67

-65 to +200

Unit

V

Vdc

Vdc

Adc

Adc

Watts

W/°C

°C

°C

COMSET SEMICONDUCTORS

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