2N3415_D74Z Просмотр технического описания (PDF) - Fairchild Semiconductor

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2N3415_D74Z

NPN General Purpose Amplifier

Fairchild Semiconductor 

NPN General Purpose Amplifier

(continued)

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

V(BR)CEO

Collector-Emitter Breakdown

IC = 10 mA, IB = 0

25

V

Voltage*

V(BR)CBO

Collector-Base Breakdown Voltage IC = 10 µA, IE = 0

25

V

V(BR)EBO

Emitter-Base Breakdown Voltage

IE = 10 µA, IC = 0

5.0

V

ICBO

Collector-Cutoff Current

IEBO

Emitter-Cutoff Current

VCB = 25 V, IE = 0

VCB = 25 V, IE = 0, TA = 100°C

VEB = 5.0 V, IC = 0

0.1

µA

15

µA

0.1

µA

ON CHARACTERISTICS*

hFE

DC Current Gain

VCE(sat)

Collector-Emitter Saturation Voltage

VBE(sat)

Base-Emitter Saturation Voltage

VCE = 4.5 V, IC = 2.0 mA

IC = 50 mA, IB = 3.0 mA

IC = 50 mA, IB = 3.0 mA

180

540

0.3

V

0.6

1.3

V

SMALL SIGNAL CHARACTERISTICS

hfe

Small-Signal Current Gain

IC = 2.0 mA, VCE = 4.5 V,

180

f = 1.0 kHz

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

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