2N2102 Просмотр технического описания (PDF) - STMicroelectronics
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2N2102 Datasheet PDF : 4 Pages
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2N2102
THERMAL DATA
Rthj-case Thermal Resistance Junction-Case
Rthj-amb Thermal Resistance Junction-Ambient
Max
Max
30
oC/W
150
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCB = 60 V
VCB = 60 V
TC = 150 oC
IEBO
Emitter Cut-off Current
(IC = 0)
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)∗ Collector-Emitter
Saturation Voltage
VEB = 5 V
IC = 100 µA
IC = 30 mA
IC = 150 mA
IB = 15 mA
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 150 mA
IB = 15 mA
hFE∗ DC Current Gain
hfe∗ High Frequency
Current Gain
IC = 10 µA
IC = 100 µA
IC = 10 mA
IC = 150 mA
IC = 500 mA
IC = 1 A
IC = 50 mA
f = 20 MHz
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
NF Noise Figure
CCBO
Collector-Base
Capacitance
IC = 300 µA VCE = 10 V f = 1 KHz
BW = 1 Hz
Rg = 510 Ω
IE = 0 VCB = 10 V f = 1MHz
CEBO
Emitter-Base
Capacitance
IC = 0 VEB = 0.5 V
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
f = 1MHz
Min. Typ.
120
65
10
20
35
40
25
10
6
Max.
2
2
5
0.5
1.1
120
8
15
80
Unit
nA
µA
nA
V
V
V
V
dB
pF
pF
2/4
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