2N1671 Просмотр технического описания (PDF) - Unspecified
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2N1671 Datasheet PDF : 2 Pages
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2N1671 – 2N1671A – 2N1671B
PN BAR-TYPE SILICON UNIJUNCTION TRANSISTORS
They are designed for medium-power switching, oscillator and pulse timing circuits.
Package outline is similar to TO-5 except
• Highly Stable Negative Resistance and Firing Voltage
• Low Firing Current
• High Pulse Curent Capabilities
• Simplified Circuit Design
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VB1E
Base 1 – Emitter Reverse Voltage
VB2E
Base 2 – Emitter Reverse Voltage
VB1B2
Interbase Voltage
IFRMS
RMS Emitter Current
IEM
Emitter Peak Current
PTOT
Total Power Dissipation
TJ
Maximum Junction
TSTG
Storage Temperature Range
This data guaranteed in addition to JEDEC registered data
2N1671
2N1671A
2N1671B
2N1671
2N1671A
2N1671B
2N1671
2N1671A
2N1671B
2N1671
2N1671A
2N1671B
2N1671
2N1671A
2N1671B
2N1671
2N1671A
2N1671B
2N1671
2N1671A
2N1671B
2N1671
2N1671A
2N1671B
Value
30
Unit
V
30
V
35
V
50
mA
2
A
450
mW
150
°C
-55 to +150
COMSET SEMICONDUCTORS
1/2
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