2N1613 Просмотр технического описания (PDF) - Philips Electronics

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2N1613

NPN medium power transistor

Philips Electronics 

Philips Semiconductors

NPN medium power transistor

Product specification

2N1613

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

VCBO

VCEO

VEBO

IC

ICM

IBM

Ptot

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

peak collector current

peak base current

total power dissipation

Tstg

Tj

Tamb

storage temperature

junction temperature

operating ambient temperature

open emitter

open base

open collector

Tamb ≤ 25 °C

Tcase = 100 °C

Tcase ≤ 25 °C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-a

Rth j-c

thermal resistance from junction to ambient

thermal resistance from junction to case

Note

1. Refer to TO-39 standard mounting conditions.

CONDITIONS

note 1

MIN.

−

−

−

−

−

−

−

−

−

−65

−

−65

MAX.

75

50

7

500

1

200

0.8

1.7

3

+150

200

+150

UNIT

V

V

V

mA

A

mA

W

W

W

°C

°C

°C

VALUE

218

58.3

UNIT

K/W

K/W

1997 Apr 11

3

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