2N1711 Просмотр технического описания (PDF) - Comset Semiconductors
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2N1711 Datasheet PDF : 3 Pages
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NPN 2N1613 – 2N1711
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
ICBO
Collector Cutoff Current
IEB0
Emitter Cutoff Current
VCBO
VEBO
VCE(SAT)(*)
VBE(SAT)(*)
Collector Base
Breakdown Voltage
Emitter Base Breakdown
Voltage
Collector-Emitter
saturation Voltage
Base-Emitter saturation
Voltage
hFE(*)
DC Current Gain
Test Condition(s)
Min
VCE=60 V, IE=0
VCE=60 V, IE=0
Tamb = 150°C
VEB=5 V
VEB=5 V
-
-
2N1613 -
2N1711 -
IC=0.1 mA
75
IE=100 µA , IC=0
7
IC=150 mA , IB=15 mA
-
IC=150 mA, IB=15 mA
-
IC=0.1 mA, VCE=10 V
20
IC=10 mA, VCE=10 V
IC=150 mA, VCE=10 V
2N1613
35
40
IC=500 mA, VCE=10 V
20
IC=10 µA, VCE=10 V
20
IC=0.1 mA, VCE=10 V
35
IC=10 mA, VCE=10 V 2N1711 75
IC=150 mA, VCE=10 V
100
IC=500 mA, VCE=10 V
40
Typ Max
- 10
- 10
- 10
-5
--
--
- 1.5
- 1.3
--
--
- 120
--
--
--
--
- 300
--
Unit
nA
µA
nA
V
V
V
V
-
Symbol
Ratings
Test Condition(s)
Min Typ Mx
fT
Transition Frequency
IC=50 mA, VCE=10 2N1613
V, f= 100MHz
2N1711
60 - -
70 - -
CCBO
Collector-Base
Capacitance
IE= 0, VCB= 10 V, f = 1MHz
- - 25
CEBO
Emitter-Base
Capacitance
IC= 0, VEB= 0.5V, f = 1MHz
- - 80
NF
Noise Figure
IC= 0.3 mA, VCE= 10 V
f = 1 kHz, R9= 510 Ω
2N1613
-
-
12
IC= 0.3 mA, VCE= 10 V
f = 1 kHz, R9= 510 Ω
2N1711
-
-
8
(*) Pulse conditions : tp < 300 µs, δ =2%.
Unit
MHz
pF
pF
dB
24/09/2012
COMSET SEMICONDUCTORS
2/3
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