2N1613 Просмотр технического описания (PDF) - Comset Semiconductors
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2N1613 Datasheet PDF : 3 Pages
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NPN 2N1613 – 2N1711
SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N1613 and 2N1711 are NPN transistors mounted in TO-39 metal package with the collector
connected to the case .
They are designed for use in high-performance amplifier, oscillator and switching circuits.
The 2N1711 is also used to advantage in amplifiers where low noise is an important factor.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCBO
VCER
VEBO
IC
ICM
IBM
Collector-Base Voltage
Collector-Emitter Voltage (RBE = 10Ω)
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
PD
Total Power Dissipation
TJ
Junction Temperature
TStg
Storage Temperature range
@ Tcase= 25°
@ Tcase= 100°
@ Tamb= 25°
Value
75
50
7
5
1
200
3
1.7
0.8
200
-65 to +150
Unit
V
V
V
mA
A
mA
W
W
W
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-c
RthJ-amb
Thermal Resistance, Junction-case
Thermal Resistance, Junction-ambient
Value
58
219
Unit
°C/ W
°C/ W
COMSET SEMICONDUCTORS
1/3
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