TA44912W Просмотр технического описания (PDF) - Dynex Semiconductor

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TA44912W

Asymmetric Thyristor

Dynex Semiconductor 

TA449..W

Notes:

1. dI/dt = 100A/µs.

2. VD ≤ 600V.

3. VR = 1V.

4. R.C. snubber. C = 0.22µF, R = 4.7Ω.

4. Double side cooled.

Fig.10 Energy per pulse for trapezoidal pulses.

Notes:

1. dI/dt = 100A/µs.

2. VD ≤ 600V.

3. VR = 1V.

4. R.C. snubber. C = 0.22µF, R = 4.7Ω.

5. Double side cooled.

Fig.11 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C.

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