HEF4016B Просмотр технического описания (PDF) - NXP Semiconductors.
Номер в каталоге
Компоненты Описание
Список матч
HEF4016B Datasheet PDF : 8 Pages
| |||
Philips Semiconductors
Quadruple bilateral switches
Product specification
HEF4016B
gates
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Power dissipation per switch
P
For other RATINGS see Family Specifications
max.
100 mW
DC CHARACTERISTICS
Tamb = 25 °C; VSS = 0 V (unless otherwise specified)
PARAMETER
VDD
V
SYMBOL TYP.
ON resistance
ON resistance
ON resistance
‘∆’ ON resistance
between any two
channels
5
10 RON
15
5
10 RON
15
5
10 RON
15
5
10 ∆RON
15
8000
230
115
140
65
50
170
95
75
200
15
10
MAX.
−
690
350
425
195
145
515
285
220
−
−
−
UNIT
CONDITIONS
Ω En at VIH; Vis = 0 to VDD; see Fig.4
Ω
Ω
Ω En at VIH; Vis = VSS; see Fig.4
Ω
Ω
Ω En at VIH; Vis = VDD; see Fig.4
Ω
Ω
Ω En at VIH; Vis = 0 to VDD; see Fig.4
Ω
Ω
PARAMETER
Quiescent
device
current
Input leakage
current at En
OFF-state leakage
current, any
channel OFF
En input
voltage LOW
En input
voltage HIGH
VDD
V
SYMBOL
−40
Tamb (°C)
+ 25
+ 85
UNIT
CONDITION
MIN. MAX. MIN. MAX. MIN. MAX.
5
10 IDD
15
15 ± IIN
− 1,0 − 1,0 − 7,5 µA VSS = 0; all valid
− 2,0 − 2,0 − 15,0 µA input combinations;
−
4,0
−
4,0
− 30,0 µA
VI = VSS or VDD
−
−
− 300 − 1000
nA En at VSS or VDD
5
10 IOZ
15
5
10 VIL
15
5
10 VIH
15
−
−
−
−−
− nA
−
−
−
−−
− nA
−
−
− 200 −
− nA
− 1,5 − 1,5 − 1,5 V
− 3,0 − 3,0 − 3,0 V
− 4,0 − 4,0 − 4,0 V
3,5 − 3,5 − 3,5 − V
7,0 − 7,0 − 7,0 − V
11,0 − 11,0 − 11,0 − V
En at VIL;
Vis = VSS or VDD;
Vos = VDD or VSS
switch OFF; see
Fig.9 for IOZ
low-impedance
between Y and Z (ON
condition)
see RON switch
January 1995
3
Share Link: 