GSD2004WS(2002) Просмотр технического описания (PDF) - Vishay Semiconductors

Номер в каталоге

Компоненты Описание

Список матч

GSD2004WS
(Rev.:2002)

High-Voltage Small-Signal Switching Diode

Vishay Semiconductors 

GSD2004WS

Vishay Semiconductors

formerly General Semiconductor

Electrical Characteristics TJ = 25°C unless otherwise noted

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Reverse Breakdown Voltage

VBR

IR = 100µA

300

—

—

V

Leakage Current

IR

VR = 240V

VR = 240V, Tj = 150°C

—

—

—

100

nA

—

100

µA

Forward Voltage

VF

IF = 20mA

IF = 100mA

—

—

0.83

0.87

—

1.00

V

Capacitance

Ctot

VF = VR = 0

f = 1MHz

—

—

5.0

pF

Reverse Recovery Time

trr

IF = IA = 30mA

—

—

50

ns

Irr = 3.0mA, RL = 100Ω

Note:

(1 )Device on fiberglass substrate, see layout

www.vishay.com

2

Document Number 88202

14-May-02

Share Link: