BD678A Просмотр технического описания (PDF) - Fairchild Semiconductor

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BD678A

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

Typical Characteristics

10000

VCE = -3V

1000

100

-0.1

-1

-10

IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain

-4.0

VCE = 3V

-3.6

-3.2

-2.8

-2.4

-2.0

-1.6

-1.2

-0.8

-0.4

-0.0

-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0

VBE[V], BASE-EMITTER VOLTAGE

Figure 3. Base-Emitter On Voltage

20

16

12

8

4

0

0

25

50

75

100

125

150

175

200

TC[oC], CASE TEMPERATURE

Figure 5. Power Derating

©2002 Fairchild Semiconductor Corporation

-2.4

IC = 250 IB

-2.0

-1.6

-1.2

-0.8

-0.4

-0.0

-0.1

-1

-10

IC[A], COLLECTOR CURRENT

Figure 2. Collector-Emitter Saturation Voltage

I (max). Pulsed

C

I (max). Continuous

C

10µs

-1

-0.1

-1

100µs

BD676A

BD678A

BD680A

BD682

-10

1ms

10ms

-100

-1000

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 4. Safe Operating Area

Rev. B, September 2002

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