BCP68-25E6327 Просмотр технического описания (PDF) - Infineon Technologies

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BCP68-25E6327

NPN Silicon AF Transistor

Infineon Technologies 

NPN Silicon AF Transistor

• For general AF applications

• High collector current

• High current gain

• Low collector-emitter saturation voltage

• Complementary type: BCP69 (PNP)

• Pb-free (RoHS compliant) package1)

• Qualified according AEC Q101

BCP68-25

4

3

2

1

Type

BCP68-25

Marking

Pin Configuration

*

1=B 2=C 3=E 4=C -

-

Package

SOT223

* Marking is the same as the type-name

Maximum Ratings

Parameter

Symbol

Collector-emitter voltage

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Peak collector current, tp ≤ 10 ms

Base current

Peak base current

Total power dissipation-

TS ≤ 114 °C

Junction temperature

Storage temperature

VCEO

VCES

VCBO

VEBO

IC

ICM

IB

IBM

Ptot

Tj

Tstg

1Pb-containing package may be available upon special request

Value

Unit

20

V

25

25

5

1

A

2

100

mA

200

3

W

150

°C

-65 ... 150

1

2008-10-10

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