BC808 Просмотр технического описания (PDF) - Diodes Incorporated.
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BC808 Datasheet PDF : 2 Pages
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SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 4 JUNE 1996
PARTMARKING DETAILS
BC807 5DZ
BC807-16 5AZ
BC807-25 5BZ
BC807-40 5CZ
BC808 5HZ
BC808-16 5EZ
BC808-25 5FZ
BC808-40 5GZ
COMPLEMENTARY TYPES BC807
BC808
BC817
BC818
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Peak Base Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
IB
IBM
Ptot
Tj:Tstg
BC807
BC808
E
C
B
SOT23
BC807
BC808
-50
-30
-45
-25
-5
-1
-500
-100
-200
330
-55 to +150
UNIT
V
V
V
A
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
ICBO
IEBO
VCE(sat)
-0.1 µA
-5 µA
-10 µA
-700 mV
VCB=-20V, IE=0
VCB=-20V, IE=0, Tamb=150°C
VEB=-5V, IC=0
IC=-500mA, IB=-50mA*
Base-Emitter
Turn-on Voltage
VBE(on)
-1.2 V
IC=-500mA, VCE=-1V*
Static Forward Current hFE
Transfer Ratio
-16
-25
-40
Transition
fT
Frequency
100
600
IC=-100mA, VCE=-1V*
40
IC=-500mA, VCE=-1V*
100
250
IC=-100mA, VCE=-1V*
160
400
IC=-100mA, VCE=-1V*
250
600
IC=-100mA, VCE=-1V*
100
MHz IC=-10mA, VCE=-5V
f=35MHz
Collector-base
Capacitance
Cobo
8.0
pF IE=Ie=0, VCB=-10V
f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices
3-9
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