CoolSET®-F3R
ICE3BR1065JF
Typical CoolMOS® Performance Characteristics
Figure 63 Drain-source on-state resistance;
RDS(on)=f(Tj); ID=2.6A;, Vcc>10.5V
Figure 66 Typ. capacitances;
C=f(VDS),VGS=0V,f=1MHz
Figure 64 Avalanche energy;
EAS=f(Tj),ID=1.7A,VDD=50V
Figure 67 Typ. Coss stored energy; Eoss=f(VDS)
Figure 65 Drain-source breakdown voltage;
VBR(DSS)=f(Tj), ID=0.25mA
Version 2.1
30
6 May 2011