VND670SP Просмотр технического описания (PDF) - STMicroelectronics
Номер в каталоге
Компоненты Описание
Список матч
VND670SP
STMicroelectronics
VND670SP Datasheet PDF : 20 Pages
| |||
VND670SP
Electrical specifications
2.2
Thermal data
Table 4. Thermal data (per island)
Symbol
Parameter
Max. value
Rthj-case Thermal resistance junction-case
Rthj-amb Thermal resistance junction-ambient
1.4
50(1)
1. When mounted using the recommended pad size on FR-4 board (see AN515 Application Note).
Unit
°C/W
°C/W
2.3
Electrical characteristics
Values specified in this section are for 9V < VCC < 18V; -40°C < Tj < 150°C, unless
otherwise stated.
Table 5. Power
Symbol
Parameter
VCC
Operating supply voltage
RON
On-state resistance
Is
Vgate
Vgs,cl
Supply current
Gate output voltage
Gate output clamp voltage
Test conditions
ILOAD = 12A
ILOAD = 12A
Tj = 25°C
On-state
Off-state
Igs= - 1 mA
Min. Typ. Max. Unit
5.5
36 V
50 mΩ
26 30 mΩ
15 mA
40 µA
5.0
8.5 V
6.0 6.8 8.0 V
Table 6. Switching (VCC = 13V, RLOAD = 1.1Ω)
Symbol
Parameter
Test conditions
tD(on)
tD(off)
tr
tf
(dVOUT/dt)on
(dVOUT/dt)off
tdong
trg
tdoffg
tfg
tdel
Turn-on delay time
Turn-off delay time
Output voltage rise time
Output voltage fall time
Turn-on voltage slope
Turn-off voltage slope
Vgsturn-on delay time
Vgs rise time
Vgsturn-off delay time
Vgs fall time
External MOSFET
turn-on dead time
Input rise time < 1µs
(see Figure 4)
C1=4.7nF
Break to ground
configuration
(see Figure 5)
(see Figure 6)
Min. Typ. Max. Unit
50 150 µs
45 135 µs
50 150 µs
40 120 µs
160 500 V/ ms
230 1200 V/ ms
0.5 2
µs
2.6 10 µs
1.0 5.0 µs
2.2 10 µs
600 1800 µs
7/20
Share Link: