FQPF6N80T Просмотр технического описания (PDF) - Fairchild Semiconductor
Номер в каталоге
Компоненты Описание
Список матч
FQPF6N80T Datasheet PDF : 8 Pages
| |||
Package Marking and Ordering Information
Part Number
FQPF6N80T
Top Mark
FQPF6N80T
Package Packing Method
TO-220F
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted.
Test Conditions
Min Typ Max Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 μA
800 --
ΔBVDSS Breakdown Voltage Temperature
/ ΔTJ Coefficient
ID = 250 μA, Referenced to 25°C --
0.9
IDSS
Zero Gate Voltage Drain Current
VDS = 800 V, VGS = 0 V
VDS = 640 V, TC = 125°C
--
--
--
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
--
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
--
--
10
100
100
-100
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 1.65 A
VDS = 50 V, ID = 1.65 A
3.0 --
5.0
-- 1.5 1.95
-- 4.3
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1150 1500
-- 125 160
--
14
18
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 400 V, ID = 5.8 A,
RG = 25 Ω
--
30
70
--
70
150
--
65
140
(Note 4)
--
45
100
VDS = 640 V, ID = 5.8 A,
--
31
VGS = 10 V
-- 7.1
--
(Note 4) --
15
--
V
V/°C
μA
μA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 3.3 A
trr
Reverse Recovery Time
VGS = 0 V, IS = 5.8 A,
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/μs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 117 mH, IAS = 3.3 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 5.8 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
5. Viso=4000V, t=0.3s in single pulse, UL recognized.
--
--
3.3
A
--
--
13.2
A
--
--
1.4
V
-- 650
--
ns
-- 5.7
--
μC
©2002 Fairchild Semiconductor Corporation
2
FQPF6N80T Rev. C1
www.fairchildsemi.com
Share Link: 