STW24N60DM2 Просмотр технического описания (PDF) - STMicroelectronics

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STW24N60DM2

N-channel 600 V, 0.175 Ω typ., 18 A FDmesh II Plus™ low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages

STMicroelectronics 

Electrical characteristics

STB24N60DM2, STP24N60DM2, STW24N60DM2

Figure 14. Source-drain diode forward

characteristics

Figure 15. Normalized V(BR)DSS vs temperature

VSD

(V)

1.4

1.2

1

AM15468v1

TJ=-50°C

V(BR)DSS

(norm)

1.11

1.09

1.07

1.05

ID = 1mA

AM15466v1

0.8

0.6

TJ=150°C

TJ=25°C

0.4

0.2

0

0 2 4 6 8 10 12 14 16 ISD(A)

1.03

1.01

0.99

0.97

0.95

0.93

-50 -25 0

25 50 75 100 TJ(°C)

8/21

DocID025499 Rev 3

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