STF24N60M2 Просмотр технического описания (PDF) - STMicroelectronics

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STF24N60M2

N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg Power MOSFET in TO-220FP and I2PAKFP packages

STMicroelectronics 

STF24N60M2, STFI24N60M2

N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg

Power MOSFET in TO-220FP and I2PAKFP packages

Datasheet − production data

Features

3

2

1

TO-220FP

123

I2PAKFP

(TO-281)

Figure 1. Internal schematic diagram

D(2)

G(1)

S(3)

AM01476v1

Order codes

STF24N60M2

STFI24N60M2

VDS @ TJmax

650 V

RDS(on) max ID

0.19 Ω 18 A

• Extremely low gate charge

• Lower RDS(on) x area vs previous generation

• Low gate input resistance

• 100% avalanche tested

• Zener-protected

Applications

• Switching applications

• LLC converters, resonant converters

Description

These devices are N-channel Power MOSFETs

developed using a new generation of MDmesh™

technology: MDmesh II Plus™ low Qg. These

revolutionary Power MOSFETs associate a

vertical structure to the company's strip layout to

yield one of the world's lowest on-resistance and

gate charge. They are therefore suitable for the

most demanding high efficiency converters.

Order codes

STF24N60M2

STFI24N60M2

Table 1. Device summary

Marking

Package

24N60M2

TO-220FP

I2PAKFP (TO-281)

Packaging

Tube

May 2013

This is information on a product in full production.

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