STL24N60M2(2014) Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге

Компоненты Описание

Список матч

STL24N60M2
(Rev.:2014)

N-channel 600 V, 0.186 Ω typ., 18 A MDmesh II Plus™ low Qg Power MOSFET in a PowerFLAT™ 8x8 HV package

STMicroelectronics 

STL24N60M2

Electrical characteristics

Symbol

Table 7. Switching times

Parameter

Test conditions

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 300 V, ID = 9 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 14 and 19)

Min. Typ. Max. Unit

- 14 - ns

- 9 - ns

- 60 - ns

- 15 - ns

Symbol

Table 8. Source drain diode

Parameter

Test conditions

Min. Typ. Max. Unit

(1)

ISD

Source-drain current

(1),(2)

ISDM

Source-drain current (pulsed)

(3)

VSD

Forward on voltage

ISD = 18 A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 18 A, di/dt = 100 A/μs

VDD = 60 V (see Figure 16)

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 18 A, di/dt = 100 A/μs

VDD = 60 V, Tj = 150 °C

(see Figure 16)

1. The value is rated according to Rthj-case and limited by package.

2. Pulse width limited by safe operating area

3. Pulsed: pulse duration = 300 μs, duty cycle 1.5%

-

18 A

-

72 A

-

1.6 V

- 332

ns

-4

μC

- 24

A

- 450

ns

- 5.5

μC

- 25

A

DocID024777 Rev 2

5/15

Share Link: