74V2G66STR Просмотр технического описания (PDF) - STMicroelectronics

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74V2G66STR

DUAL BILATERAL SWITCH

STMicroelectronics 

74V2G66

DUAL BILATERAL SWITCH

s HIGH SPEED:

tPD = 0.3ns (TYP.) at VCC = 5V

tPD = 0.4ns (TYP.) at VCC = 3.3V

s LOW POWER DISSIPATION:

ICC = 1µA(MAX.) at TA = 25°C

s LOW "ON" RESISTANCE:

RON =6.5Ω (TYP.) AT VCC = 5V II/O = 1mA

RON = 8.5Ω (TYP.) AT VCC = 3.3V II/O = 1mA

s SINE WAVE DISTORTION:

0.04% AT VCC = 3.3V f = 1KHz

s WIDE OPERATING RANGE:

VCC (OPR) = 2V TO 5.5V

s IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V2G66 is an advanced high-speed CMOS

DUAL BILATERAL SWITCH fabricated in silicon

gate C2MOS technology. It achieves high speed

propagation delay and VERY LOW ON

resistances while maintaining true CMOS low

power consumption. This bilateral switch handles

rail to rail analog and digital signals that may vary

across the full power supply range (from GND to

VCC).

SOT23-8L

ORDER CODES

PACKAGE

SOT23-8L

T&R

74V2G66STR

The C input is provided to control the switch and

it’s compatible with standard CMOS output; the

switch is ON (port I/O is connected to Port O/I)

when the C input is held high and OFF (high

impedance state exists between the two ports)

when C is held low. It can be used in many

application as Battery Powered System, Test

Equipment. It’s available in the commercial and

extended temperature range in SOT23-8L

package. All inputs and output are equipped with

protection circuits against static discharge, giving

them ESD immunity and transient excess voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

June 2003

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